JFET imager having light sensing inversion layer induced by insu

Details JFET imager having light sensing inversion layer induced by insu JFET imager having light sensing inversion layer induced by insu

1983-12-02

1987-08-04

Larkins, William D.

357 22, 357 52, 357 54, H01L 3110, H01L 2714

Patent

active

046849688

ABSTRACT:
A solid state imaging element includes a semiconductor body consisting of a substrate of n.sup.+ conductivity type forming a drain region and of an epitaxial layer of n.sup.- conductivity type. In a surface of the epitaxial layer is a source region of n.sup.+ conductivity type and a signal storage gate region of p.sup.+ conductivity type. A transparent insulating film is provided on the signal storage gate region and on a portion of the surface of the epitaxial layer adjoining the signal storage gate region. A transparent gate electrode is provided on the insulating layer. Photocarriers generated in a depletion layer under the surface portion of the epitaxial layer by a light, which is incident through the transparent gate electrode and the transparent insulating layer, are stored in an inversion layer formed by a given bias voltage applied to the gate electrode.

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