JFET controlled schottky barrier diode

Details JFET controlled schottky barrier diode JFET controlled schottky barrier diode

2006-06-20

2006-06-20

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S477000, C257S486000, C257S287000

Reexamination Certificate

active

07064407

ABSTRACT:
A JFET controlled Schottky barrier diode includes a p-type diffusion region integrated into the cathode of the Schottky diode to form an integrated JFET where the integrated JFET provides on-off control of the Schottky barrier diode. The p-type diffusion region encloses a portion of the forward current path of the Schottky barrier diode where the p-type diffusion region forms the gate of the JFET and the enclosed portion of the forward current path forms the channel region of the JFET. By applying a reverse biased potential to the gate of the JEFT with respect to the anode of the Schottky diode, the forward current of the Schottky diode can be pinched off, thereby providing on-off control over the Schottky diode forward current.

REFERENCES:
patent: 4801983 (1989-01-01), Ueno et al.
patent: 5258640 (1993-11-01), Hsieh et al.
patent: 5430323 (1995-07-01), Yamazaki et al.
patent: 6261932 (2001-07-01), Hulfachor
Linear Technology Data Sheet for LT3464, “Micropower Boast Converter with Schottky and Output Disconnect in ThinSOT™,” pp. 1-16.
Micrel Data Sheet for MIC2290, “2mmX2mm PWM Boost Regulator with Internal Schotty Diode,” Aug. 2004, pp. 1-12.
Micrel Data Sheet for MIC2288, “1A 1.2PWM Boost Converter in Thin SOFT-23 AND 2X2 MLF™,” Aug. 2004, pp. 1-12.

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