JFET and MESFET structures for low voltage high current and...

Details JFET and MESFET structures for low voltage high current and... JFET and MESFET structures for low voltage high current and...

2006-05-16

2006-05-16

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S136000, C438S186000, C438S556000, C438S561000, C438S564000, C257S135000, C257S136000

Reexamination Certificate

active

07045397

ABSTRACT:
JFET and MESFET structures, and processes of making same, for low voltage, high current and high frequency applications. The structures may be used in normally-on (e.g., depletion mode) or normally-off modes. The structures include an oxide layer positioned under the gate region which effectively reduces the junction capacitance (gate to drain) of the structure. For normally off modes, the structures reduce gate current at Vg in forward bias. In one embodiment, a silicide is positioned in part of the gate to reduce gate resistance. The structures are also characterized in that they have a thin gate due to the dipping of the spacer oxide, which can be below 1000 angstroms and this results in fast switching speeds for high frequency applications.

REFERENCES:
patent: 4566172 (1986-01-01), Bencuya et al.
patent: 4845051 (1989-07-01), Cogan et al.
patent: 5227647 (1993-07-01), Nishizawa et al.
patent: 04033377 (1992-02-01), None

Affiliated with

Also associated with

Rating

JFET and MESFET structures for low voltage high current and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with JFET and MESFET structures for low voltage high current and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and JFET and MESFET structures for low voltage high current and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3582840