Jet vapor reduction of the thickness of process layers

Details Jet vapor reduction of the thickness of process layers Jet vapor reduction of the thickness of process layers

1998-07-21

2000-11-14

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 438724, 438726, H01L 2100

Patent

active

06147004&

ABSTRACT:
The present invention is directed to a method and apparatus for reducing the thickness of a process layer. The method comprises generating a relatively high velocity gas stream comprised of active ions that will react with the process layer, and moving the wafer relative to the nozzle to effect a reduction in the thickness of the process layer. The apparatus is comprised of a process chamber, means for securing a wafer in the chamber, a nozzle having an exit that is substantially the same width as the diameter of the wafer positioned in the chamber. The apparatus further comprises a means for moving the wafer relative to the nozzle.

REFERENCES:
patent: 4681776 (1987-07-01), Bok
patent: 4900395 (1990-02-01), Syverson et al.
patent: 5110407 (1992-05-01), Ono et al.
patent: 5127984 (1992-07-01), Hua et al.
patent: 5423940 (1995-06-01), Chen et al.
patent: 5597495 (1997-01-01), Keil et al.
patent: 5874366 (1999-02-01), Sporer et al.

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