(IV).sub.x (III-V).sub.1-x alloys formed in situ in III-V hetero


Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0


357 61, 357 17, H01L 2988




A high performance III-V heterostructures exhibiting quantum size effects has been achieved in MODCVD utilizing in situ grown (IV).sub.x (III-V).sub.1-x alloys, where (IV) is a group IV element comprising Si, Ge, C or Sn or admixtures thereof and (III-V) is a group III-V binary, trinary, quaternary or pentad compound or alloy such as, for example, GaAs, AlAs, GaAlAs, GaAlAsP, InGaAlP, InAlAsP or InGaAlAsP. Specific examples are (Si.sub.2).sub.x (GaAs).sub.1-x, which is an alloy that functions as a barrier when grown in situ in a GaAs active region of a heterostructure and (Ge.sub.2).sub.x (GaAs).sub.1-x, which is an alloy that functions as a quantum well when grown in situ in GaAs or GaAlAs active region (e.g. highest refractive index and narrowest bandgap) of a heterostructure. The disclosure further relates to the utilization of a nucleating or catalytic process wherein a small amount of a cluster collector or anchorage component, e.g., Al, Mg or Ti, on the surface of the sample in the reaction zone of the MOCVD reactor. This component is believed to function as a nucleating or catalytic site to which IV--IV pairs initially attach and, thereafter, continually attach to form islands that provide three dimensional barriers or wells in an active region of a heterostructure. Another aspect of the disclosure deals with in situ induced disordering vis a vis surface initiated impurity induced disordering (SIIID) as known in the art. Superlattice or well disordering can be achieved in situ during crystal growth rather than by introduction of an impurity component into the superlattice as contemplated in SIIID.

patent: 4561005 (1985-12-01), Shannon
patent: 4695857 (1987-09-01), Baba
patent: 4760430 (1988-07-01), Coon


Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.


(IV).sub.x (III-V).sub.1-x alloys formed in situ in III-V hetero does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with (IV).sub.x (III-V).sub.1-x alloys formed in situ in III-V hetero, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and (IV).sub.x (III-V).sub.1-x alloys formed in situ in III-V hetero will most certainly appreciate the feedback.

Rate now


Profile ID: LFUS-PAI-O-125356

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.