ITO sputtering target and its cleaning method

Details ITO sputtering target and its cleaning method ITO sputtering target and its cleaning method

1998-10-13

2000-08-22

Diamond, Alan

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429813, 20429803, 20419229, 20419215, 20419213, 134 1, 134 6, C23C 1434, B08B 312, B08B 700, B08B 704

Patent

active

061066818

ABSTRACT:
The present invention provides an ITO sputtering target and a method of cleaning the target. ITO ground powder which is deposited on a surface of the target requires removal to increase the cleanness of the target surface. This prevents the production of nodules caused by sputtering in order to restrain abnormal discharge and prevent the production of particles. Particles deposited on a sputtered surface of an ITO sintered target are removed by subjecting the sputtered surface to multiple-oscillation ultrasonic washing, or alternatively, by sticking an adhesive tape to the sputtered surface, sufficiently rubbing the tape against the surface, and then peeling the tape off the surface. Both methods result in 400 or fewer deposited particles of 0.2 .mu.m or more average particle diameter being present in a 100 .mu.m.times.100 .mu.m area of the sputtered surface.

REFERENCES:
patent: 5435826 (1995-07-01), Sakakibara et al.
patent: 5460793 (1995-10-01), Kano et al.
patent: 5478456 (1995-12-01), Humpal et al.
patent: 5630918 (1997-05-01), Takahara et al.
patent: 5700419 (1997-12-01), Matsunaga et al.
patent: 5980815 (1999-11-01), Matsunaga et al.
1 page English Abstract of Japanese publication No. 09-104973 (Patent Abstracts of Japan), Apr. 1997.
1 page English Abstract of Japanese publication No. 08-060352 (Patent Abstracts of Japan), Mar. 1996.

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