ITO sputtering target

Details ITO sputtering target ITO sputtering target

1995-06-05

1997-05-20

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419229, C23C 1434

Patent

active

056309180

ABSTRACT:
An ITO sputtering target comprised of indium oxide and tin oxide and having a density of at least 6.4 g/cm.sup.3, wherein the center line average height (R.sub.a) of the surface to be sputtered is not larger than 0.8 .mu.m, and at least one property selected from the following (i), (ii) and (iii) is satisfied: (i) the maximum height (R.sub.max) is not larger than 7.0 .mu.m, (ii) the ten point average height (R.sub.z) is not larger than 6.0 .mu.m, and (iii) the maximum height (R.sub.t) of said surface as expressed by the distance between two lines which are parallel to the center line of a surface roughness curve drawn as measured at a sample length of 2.5 mm, and which sandwich said surface roughness curve, is not larger than 6.5 .mu.m. Preferably, R.sub.a and the or each property (R.sub.max, R.sub.z or R.sub.t) selected from (i), (ii) and (iii) satisfy the formula: R.sub.a .times.(R.sub.max, R.sub.z or R.sub.t).ltoreq.3.0 .mu.m.sup.2.

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