ITO film treated by nitrogen plasma and the organic...

Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C313S498000, C313S503000

Reexamination Certificate

active

07619356

ABSTRACT:
Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic electroluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.

REFERENCES:
patent: 4871234 (1989-10-01), Suzuki
patent: 5059863 (1991-10-01), Tashiro et al.
patent: 5779802 (1998-07-01), Borghs et al.
patent: 5789860 (1998-08-01), Inoguchi et al.
patent: 6036823 (2000-03-01), Inoguchi et al.
patent: 6259202 (2001-07-01), Sturm et al.
patent: 7023130 (2006-04-01), Haoto
patent: 7132373 (2006-11-01), Fukuhisa et al.
patent: 7223621 (2007-05-01), Kim
patent: 2001/0018238 (2001-08-01), Kim
patent: 2003/0087119 (2003-05-01), Iwabuchi et al.
patent: 2003/0211233 (2003-11-01), Kubota et al.
patent: 0817 537 (1998-01-01), None
patent: 3037292 (A) (1991-02-01), None
patent: 4293767 (A) (1992-10-01), None
patent: 2004170724 (2004-06-01), None
patent: 10-1999-004159 (1999-09-01), None
patent: 10-2002-0088454 (2002-11-01), None
patent: 385554 (2000-03-01), None
patent: 461124 (2001-10-01), None
patent: WO 02/088274 (2002-11-01), None
Translation of Official Letter of Pending Patent Application under Examination dated Apr. 26, 2007 from the Taiwan Intellectual Property Office.
Wu, et al. “Surface Modification of Indium Tin Oxide By Plasma Treatment: An Effective Method to Improve The Efficiency, Brightness, and Reliability of Organic Light Emitting Devices”;Appl. Phys. Lett. 70(11), Mar. 17, 1997.
Fujita, et al. “Surface Treatment of Indium-Tin Oxide Substrates and its Effects on Initial Nucleation Processes of Diamine Films”; Jpn. J. App;. Phys. vol. 36 (1997) pp. 350-353 Part 1, No. 1A, Jan. 1997.
Kim, et al. “Indium-Tin Oxide Treatments for Single-and Double-Layer Polymeric Light-Emitting Diodes: The Relation Between the Anode Physical, Chemical, and Morphological Properties and the Device Performance”; Joun of App Phys. vol. 84, No. 12 Dec. 15, 1998.
Lee C-T et al: “Effects of plasma treatment on the electrical and optical properties of indium tin oxide films fabricated by r.f. reactive sputtering”; Elsevier Science B.V., Thin Solid Films, 386, Dec. 31, 2001, pp. 105-110.
Yu H Y et al: “Surface electronic structure of plasma-treated indium tin oxides”; Applied Physics Letters, vol. 78, n. 17, Apr. 23, 2001, pp. 2595-2597.
Song W. So Sk, Cao: “Angular-dependent photoemission studies of indium tin oxide surfaces”; Applied Physics A, 72, Dec. 31, 2001, pp. 361-365.
Chan, I-Min et al. “Enhanced performance of organic light-emitting devices by atmospheric plasma treatment of indium tin oxide surfaces”; Applied Physics Letters, vol. 80, n. 1, Jan. 7, 2002, pp. 13-15.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

ITO film treated by nitrogen plasma and the organic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ITO film treated by nitrogen plasma and the organic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ITO film treated by nitrogen plasma and the organic... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4133749

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.