Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-02-28
2006-02-28
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S022000, C438S030000, C257S072000
Reexamination Certificate
active
07005673
ABSTRACT:
An ITO film-formed substrate having excellent alkali resistance and adhesion is provided. For the ITO film-formed substrate, a structure is adopted in which a color filter102, an organic protective film103, intermediate layers104aand104b, and an ITO film105having an electrode pattern patterned therein are formed in this order from the bottom upwards on a surface of a glass substrate101. The intermediate layer104ais deposited on a surface of the organic protective film103through a high-frequency sputtering method using Ar as an introduced gas, and is made of a metal oxide that is not prone to dissolving in alkalis; the intermediate layer104bis deposited through a reactive sputtering method or a high-frequency sputtering method, and is made of a metal oxide or metal nitride that is not prone to dissolving in alkalis.
REFERENCES:
patent: 6277507 (2001-08-01), Anzaki et al.
patent: 6-148618 (1994-05-01), None
patent: 2000-180840 (2000-06-01), None
Katoh Yukihiro
Kiyota Shogo
Frishauf Holtz Goodman & Chick P.C.
Le Thao P.
Nippon Sheet Glass Co. Ltd.
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