Iteratively selective gas flow control and dynamic database...

Details Iteratively selective gas flow control and dynamic database... Iteratively selective gas flow control and dynamic database...

2005-03-08

2005-03-08

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

C438S710000, C438S714000

Reexamination Certificate

active

06864174

ABSTRACT:
A method for compensating for CD variations across a semiconductor process wafer surface in a plasma etching process including providing a semiconductor wafer having a process surface including photolithographically developed features imaged from a photomask; determining a first dimensional variation of the features with respect to corresponding photomask dimensions along at least one wafer surface direction to determine a first levelness of the process surface; determining gas flow parameters in a plasma reactor for a plasma etching process required to approach a level process surface by reference to an archive of previous plasma etching process parameters carried out in the plasma reactor; carrying out the plasma etching process in the plasma rector according to the determined gas flow parameters; and, determining a second dimensional variation of the features along the at least one wafer surface direction to determine a second levelness of the process surface.

REFERENCES:
patent: 6143080 (2000-11-01), Bartholomew et al.
patent: 6245581 (2001-06-01), Bonser et al.
patent: 20020103563 (2002-08-01), Izawa et al.
patent: 20030019580 (2003-01-01), Strang

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