Iterative self-aligned contact metallization process

Details Iterative self-aligned contact metallization process Iterative self-aligned contact metallization process

Filed on

1991-05-01

Date issued

1992-06-16

Examiner

Prenty, Mark

Other Related Categories

357 65, 357 68, H01L 2348

Type

Patent

Status

active

Patent number

051228599

Description

ABSTRACT:
A method is provided for forming multiple layers of interconnections adjacent a planar surface. A first insulator layer is formed adjacent the selected planar surface. A first conductor layer is formed adjacent the first insulator layer. A second insulator is formed adjacent the first conductor layer. A first cavity and a second cavity are formed, each having sidewalls extending through said second insulator layer and said first conductor layer. The first cavity is formed wider than the second cavity. A third insulator layer is conformally deposited adjacent the second insulator layer, such that sidewall insulators are deposited on sidewalls of the first cavity and such that the second cavity is substantially filled with insulator. An etch is performed through the first cavity to expose a portion of the planar surface. A second conductor layer is conformally deposited adjacent third insulator layer such that second conductor layer extends through the first cavity to contact the planar surface.

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patent: 4829018 (1989-05-01), Wahlstrom
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patent: 4833521 (1989-05-01), Early
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4926243 (1990-05-01), Nakagawa et al.
patent: 4958222 (1990-09-01), Takakura et al.
patent: 4970177 (1990-11-01), Mizushima

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