IT-CCD and manufacturing method thereof

Details IT-CCD and manufacturing method thereof IT-CCD and manufacturing method thereof

2008-01-01

2008-01-01

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S144000

Reexamination Certificate

active

07314775

ABSTRACT:
The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without lowering withstand voltage between charge transfer electrodes. A first insulation film is formed on the surface of a silicon substrate, and inter-electrode insulation films made of silicon oxide films and charge transfer electrodes made of polycrystalline silicon films are formed on the surface of the first insulation film. The inter-electrode insulation films are formed from side walls of the polycrystalline silicon films.

REFERENCES:
patent: 5286669 (1994-02-01), Maeda et al.
patent: 6090640 (2000-07-01), Ogawa
patent: 6165908 (2000-12-01), Hatano et al.
patent: 2002/0075391 (2002-06-01), Shizukuishi
patent: 11-31812 (1999-02-01), None

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