Isotopically pure single crystal epitaxial diamond films and the

Details Isotopically pure single crystal epitaxial diamond films and the Isotopically pure single crystal epitaxial diamond films and the

1990-07-02

1994-11-01

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117929, C30B 2904

Patent

active

053604792

ABSTRACT:
The present invention is directed to the production of single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13. The product is believed to be like that diamond product in application Ser. No. 448,469, but is made by a different method. In the present invention, isotopically pure single-crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single-crystal diamond comprises the steps of placing in a reaction chamber a single crystal substrate heated to an elevated CVD diamond-forming temperature. A gaseous mixture of hydrogen and a hydrocarbon of isotopically pure carbon-12 or carbon-13 is provided in the chamber. The gaseous mixture then is at least partially decomposed in the chamber to form an isotopically-pure single crystal diamond layer on the single crystal substrate disposed therein. The thus-formed isotopically-pure single crystal diamond layer optionally may be removed from the single crystal substrate. Another method for forming isotopically-pure single-crystal diamond comprises diffusing isotopically-pure carbon-12 or carbon-13 through a metallic catalyst/solvent under high pressure to a region containing a single crystal substrate to form an isotopically-pure single-crystal diamond layer on said single crystal substrate. The single crystal substrate is stable under the high pressure and elevated temperatures used during the diffusion process. The single crystal substrates optionally may be diamond, including the isotopically-pure single-crystal diamond films formed by the inventive method disclosed herein, thus forming multi-layered diamond structures.

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patent: 4749587 (1988-06-01), Bergmann et al.
patent: 4816286 (1989-03-01), Hirose
"Rapid growth of single-crystal diamond on diamond, substrates"; Exp. Solid State Phys. Ill Univ.; Janssen et al; Surf Coat Techol., 47(1-3), 113-26.
"Vapor Growth of Diamond on Diamond and Other Surfaces"; Spitsyn et al.; Journal of Crystal Growth 52 (1981); pp. 219-226.
"The barrier height of Schottky diodes with a chemical-vapor-deposited diamond base"; Hicks et al., Penn State Uinv., (Oct. 1988), pp. 2139-2141; J. Appl. Phys. 65(5) (1989).
Isotopic Enhancement of Thermal Conductivity and Damage Thesholds in Diamond; Seitz; Harvard Univ. pp. 1-4 (Feb. 1989).

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