Isolator for electrically isolating semiconductor devices in an

Details Isolator for electrically isolating semiconductor devices in an Isolator for electrically isolating semiconductor devices in an

1992-03-02

1993-02-23

Dzierzynski, Paul M.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257649, 437 67, H01L 2712

Patent

active

051895013

ABSTRACT:
An isolator for isolating semiconductor devices, components of an integrated circuit, on a semiconductor substrate, wherein the isolator is delimited by walls of a trench formed on a top surface of the semiconductor substrate, and the trench is filled with a silicon oxide layer deposited by a chemical vapor deposition method. A small ditch created in the middle of a top surface of the silicon oxide layer in the trench is filled with silicon, and at least a top surface of the silicon is thermally oxidized to form another silicon oxide layer.

REFERENCES:
patent: 4907063 (1990-03-01), Okada et al.
IBM Technical Disclosure Bulletin, vol. 23, No. 11, Apr., 1981, pp. 4917-4919, "Prevention of Birdsbeak Formation".
IBM Technical Disclosure Bulletin, vol. 24, No. 7B, Dec., 1981, pp. 3684-3688, "Improved Device Packing Density".

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