Isolation trenches with protected corners

Details Isolation trenches with protected corners Isolation trenches with protected corners

1997-07-28

1999-11-09

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438437, 148DIG50, H01L 2176

Patent

active

059813563

ABSTRACT:
A method for forming trench isolation with spacers on the corners where the silicon and oxide intercept. A cavity is formed in silicon with a mask. Prior to completely removing the mask, the mask is further etched to enlarge the upper portion of the cavity. The cavity is filled with oxide, which is subsequently etched to produce a dome-shaped cap, protective of sharp silicon corners that would otherwise upset electrical characteristics of transistors.

REFERENCES:
patent: 4923821 (1990-05-01), Namose
patent: 5350941 (1994-09-01), Madan
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5521422 (1996-05-01), Mandelman et al.
patent: 5567270 (1996-10-01), Liu
patent: 5578518 (1996-11-01), Koike et al.
patent: 5643822 (1997-07-01), Furukawa et al.
patent: 5677229 (1997-10-01), Morita et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5766823 (1998-06-01), Fumitomo
patent: 5801083 (1998-09-01), Yu et al.
patent: 5834358 (1998-11-01), Pan et al.

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