Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-01-23
1998-08-04
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257499, 257501, 257510, 257374, 438221, 438224, H01L 2941, H01L 21762
Patent
active
057897921
ABSTRACT:
A structure includes an element isolating region for isolating a transistor formation region having an MOS transistor from other element formation region. Two or more trenches is formed at a semiconductor substrate in the element isolation region. An isolating and insulating layer filling the trench and protruded above the main surface of the semiconductor substrate has a side surface continuous with a side surface of the trench. Insulating layers and layered on the surface of the semiconductor substrate is located between the trenches. The insulating layer has the upper surface at the substantially same level as the upper surface of an isolating and insulating layer. This structure suppresses increase in a parasitic capacitance of a gate electrode, and allows a fast operation without difficulty.
REFERENCES:
patent: 4506434 (1985-03-01), Ogawa et al.
patent: 4593459 (1986-06-01), Poppert et al.
patent: 4908688 (1990-03-01), Lund et al.
patent: 4945070 (1990-07-01), Hsu
patent: 4980306 (1990-12-01), Shimbo
patent: 5319235 (1994-06-01), Kihara et al.
IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec. 1985, pp. 2828-2829.
K. Shibahara et al, "Trench Isolation With .gradient.(Nabla)-Shaped Buried Oxide for 256Mega-Bit Drams,"International Electron Device Meeting 1992, pp. 275-278.
T. Nakabayashi et al, "A Novel 0.25.mu.m Cmos Technology for 6.28.mu.m.sup.2 -Tr. Sram Cell With Elevated Trench Isolation and Line-and-Space Shaped Gates (Etils),"International Electron Device Meeting 1995, pp. 1011-1013.
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
Thomas Tom
LandOfFree
Isolation trench structures protruding above a substrate surface does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Isolation trench structures protruding above a substrate surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation trench structures protruding above a substrate surface will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1180055