Isolation trench in semiconductor substrate with nitrogen-contai

Details Isolation trench in semiconductor substrate with nitrogen-contai Isolation trench in semiconductor substrate with nitrogen-contai

1998-07-22

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

437 64, 437 67, 437238, 438296, 438400, 438437, H01L 2176

Patent

active

061566209

ABSTRACT:
An isolation trench in a silicon semiconductor substrate is provided with a barrier region containing nitrogen atoms formed in the trench, contiguous with the silicon semiconductor substrate surfaces of the trench. The novel isolation trench structure of the invention is formed by forming an isolation trench in a silicon semiconductor substrate; forming in the isolation trench a barrier region by treating the trench structure with nitrogen atoms from a nitrogen plasma; and then forming a silicon oxide layer over the barrier region in the trench to confine the nitrogen atoms in the barrier region. In a preferred embodiment, a silicon oxide liner is first formed over the silicon semiconductor substrate surfaces of the trench, and then the trench structure is treated with nitrogen atoms from a nitrogen plasma to form, on the silicon semiconductor substrate surfaces of the trench, a barrier layer which contains silicon atoms, oxygen atoms, and nitrogen atoms.

REFERENCES:
patent: 5702977 (1997-12-01), Jang et al.
patent: 5780346 (1998-07-01), Arghavani
Wolf, Stanley., Silicon Processing for the VLSI Era, 3 vols., (Sunset Beach, CA: Lattice Press, 1995), vol. 3: The Submicron Mosfet, pp. 224-225 .

Affiliated with

Also associated with

Rating

Isolation trench in semiconductor substrate with nitrogen-contai does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolation trench in semiconductor substrate with nitrogen-contai, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation trench in semiconductor substrate with nitrogen-contai will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-960993