Isolation trench having plural profile angles

Details Isolation trench having plural profile angles Isolation trench having plural profile angles

1998-02-17

2000-03-07

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257774, H01L 2710

Patent

active

060344091

ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a trench formed in the substrate and having an inner wall including a sidewall and a bottom surface, a silicon oxide film deposited on the inner wall, and a buried oxide film deposited on the silicon oxide film to bury the trench, wherein the sidewall has portions of a sidewall sloped at a first profile angle A1, a second profile angle A2 and a third profile angle A3 from a surface of the substrate toward the bottom surface of the trench, and the profile angles have a relationship of A1<A2, A3<A2 and A1<83.degree..

REFERENCES:
patent: 4855017 (1989-08-01), Douglas
patent: 5746884 (1998-05-01), Gupta et al.
patent: 5801083 (1998-09-01), Yu et al.
B.H. Roh, et al, "Highly Manufacturable Shallow Trench Isolation for Giga Bit DRAM," Ext. Abst SSDM 1995, pp. 590-592.

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