Isolation trench geometry for image sensors

Details Isolation trench geometry for image sensors Isolation trench geometry for image sensors

2006-05-31

2010-06-15

Fahmy, Wael (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S248000, C438S359000, C257S374000, C257S446000

Reexamination Certificate

active

07736992

ABSTRACT:
A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less than approximately 85 degrees from the plane of the top surface of the substrate.

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