Isolation technology for submicron semiconductor devices

Details Isolation technology for submicron semiconductor devices Isolation technology for submicron semiconductor devices

2003-05-12

2011-10-04

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

08030172

ABSTRACT:
A semiconductor structure has a substrate having a trench, an isolation dielectric in the trench, and a stress buffer layer, between the substrate and the dielectric. Semiconductor devices containing the semiconductor structure may have higher reliability, and may have a reduced manufacturing costs per device.

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