Isolation structures for integrated circuits and modular...

Details Isolation structures for integrated circuits and modular... Isolation structures for integrated circuits and modular...

2007-08-08

2011-12-06

Le, Thao (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S404000, C257S510000, C257SE21551, C257SE21540

Reexamination Certificate

active

08071462

ABSTRACT:
A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

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