Isolation structures for integrated circuits and modular...

Details Isolation structures for integrated circuits and modular... Isolation structures for integrated circuits and modular...

2006-05-31

2010-11-02

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C438S400000

Reexamination Certificate

active

07825488

ABSTRACT:
A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

REFERENCES:
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4454647 (1984-06-01), Joy et al.
patent: 4478655 (1984-10-01), Nagakubo et al.
patent: 4655875 (1987-04-01), Wada et al.
patent: 4819052 (1989-04-01), Hutter
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5324973 (1994-06-01), Sivan
patent: 5374569 (1994-12-01), Yilmaz et al.
patent: 5386136 (1995-01-01), Williams et al.
patent: 5410175 (1995-04-01), Kyomasu et al.
patent: 5420061 (1995-05-01), Manning
patent: 5485027 (1996-01-01), Williams et al.
patent: 5506431 (1996-04-01), Thomas
patent: 5525824 (1996-06-01), Himi et al.
patent: 5557135 (1996-09-01), Hashimoto
patent: 5668397 (1997-09-01), Davis et al.
patent: 5684305 (1997-11-01), Pearce
patent: 5807783 (1998-09-01), Gaul et al.
patent: 5883413 (1999-03-01), Ludikhuize
patent: 5892264 (1999-04-01), Davis et al.
patent: 5914523 (1999-06-01), Bashir et al.
patent: 5986863 (1999-11-01), Oh
patent: 6013936 (2000-01-01), Colt
patent: 6130458 (2000-10-01), Takagi et al.
patent: 6144086 (2000-11-01), Brown et al.
patent: 6163052 (2000-12-01), Liu et al.
patent: 6316336 (2001-11-01), Blanchard
patent: 6383892 (2002-05-01), Colt
patent: 6559505 (2003-05-01), Fallica
patent: 6657262 (2003-12-01), Patti
patent: 6740958 (2004-05-01), Nakazato et al.
patent: 6855985 (2005-02-01), Williams et al.
patent: 6900091 (2005-05-01), Williams et al.
patent: 6943426 (2005-09-01), Williams et al.
patent: 7009271 (2006-03-01), Thurgate et al.
patent: 7049663 (2006-05-01), Wang
patent: 7176548 (2007-02-01), Williams et al.
patent: 7183610 (2007-02-01), Pattanayak et al.
patent: 7268045 (2007-09-01), Hower et al.
patent: 2001/0000288 (2001-04-01), Oh
patent: 2001/0013636 (2001-08-01), Dunn et al.
patent: 2001/0015459 (2001-08-01), Watanabe et al.
patent: 2002/0008299 (2002-01-01), Leonardi
patent: 2002/0084506 (2002-07-01), Voldman et al.
patent: 2003/0057498 (2003-03-01), Yamashita
patent: 2003/0107103 (2003-06-01), Iwata et al.
patent: 2003/0168712 (2003-09-01), Shin et al.
patent: 2004/0026746 (2004-02-01), Nakazawa et al.
patent: 2004/0032005 (2004-02-01), Williams et al.
patent: 2004/0033666 (2004-02-01), Williams et al.
patent: 2004/0071030 (2004-04-01), Goda et al.
patent: 2005/0014324 (2005-01-01), Williams et al.
patent: 2005/0014329 (2005-01-01), Williams et al.
patent: 2005/0087805 (2005-04-01), Ning
patent: 2005/0142724 (2005-06-01), Williams et al.
patent: 2005/0142791 (2005-06-01), Williams et al.
patent: 2005/0142792 (2005-06-01), Williams et al.
patent: 2005/0158939 (2005-07-01), Williams et al.
patent: 2005/0179093 (2005-08-01), Morris
patent: 2005/0179111 (2005-08-01), Chao
patent: 2005/0189606 (2005-09-01), Nakagawa
patent: 2005/0272207 (2005-12-01), Williams et al.
patent: 2005/0272230 (2005-12-01), Williams et al.
patent: 2005/0287765 (2005-12-01), Onai et al.
patent: 2006/0076629 (2006-04-01), Yilmaz
patent: 2006/0175635 (2006-08-01), Arai et al.
patent: 2006/0223257 (2006-10-01), Williams et al.
patent: 2007/0013021 (2007-01-01), Zhang
patent: 2007/0132056 (2007-06-01), Williams et al.
patent: 2007/0158779 (2007-07-01), Cannon et al.
patent: 2007/0241421 (2007-10-01), Liu et al.
patent: 2007/0278568 (2007-12-01), Williams et al.
patent: 2008/0191277 (2008-08-01), Disney et al.
patent: 2008/0197408 (2008-08-01), Disney et al.
patent: 2008/0197445 (2008-08-01), Disney et al.
patent: 2008/0197446 (2008-08-01), Disney et al.
patent: 2008/0210980 (2008-09-01), Disney et al.
patent: 2008/0213972 (2008-09-01), Disney et al.
patent: 2008/0217699 (2008-09-01), Disney et al.
patent: 2008/0230812 (2008-09-01), Disney et al.
patent: 2008/0237656 (2008-10-01), Williams et al.
patent: 2008/0237704 (2008-10-01), Williams et al.
patent: 2008/0237706 (2008-10-01), Williams et al.
patent: 2008/0237782 (2008-10-01), Williams et al.
patent: 2008/0237783 (2008-10-01), Williams et al.
patent: 2008/0290449 (2008-11-01), Williams et al.
patent: 2008/0290450 (2008-11-01), Williams et al.
patent: 2008/0290451 (2008-11-01), Williams et al.
patent: 2009/0020811 (2009-01-01), Voldman
patent: 2009/0101937 (2009-04-01), Lee et al.
patent: 2009/0236683 (2009-09-01), Williams et al.
patent: 0 589 675 (1994-03-01), None
patent: 1357598 (2003-10-01), None
patent: 2 362 508 (2001-11-01), None
patent: 10-0456691 (2008-11-01), None
U.S. Appl. No. 11/890,940, filed Aug. 2007, Williams et al.
U.S. Appl. No. 11/891,006, filed Aug. 2007, Williams et al.
U.S. Appl. No. 11/890,993, filed Aug. 2007, Williams et al.

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