Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-06-07
2011-06-07
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S499000
Reexamination Certificate
active
07956437
ABSTRACT:
A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
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Chan Wai Tien
Chen Jun-Wei
Disney Donald Ray
Ryu HyungSik
Williams Richard K.
Advanced Analogic Technologies (Hong Kong) Limited
Advanced Analogic Technologies, Inc.
Le Thao X
Patentability Associates
Warrior Tanika
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