Isolation structures for CMOS image sensor chip scale packages

Details Isolation structures for CMOS image sensor chip scale packages Isolation structures for CMOS image sensor chip scale packages

2007-01-04

2009-08-04

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S114000, C438S458000, C438S460000, C257S620000, C257S622000, C257S623000

Reexamination Certificate

active

07569409

ABSTRACT:
Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.

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