Isolation structure using liquid phase oxide deposition

Details Isolation structure using liquid phase oxide deposition Isolation structure using liquid phase oxide deposition

1995-02-23

1996-05-14

Carroll, J.

Fishing, trapping, and vermin destroying

437238, 437239, 257510, 257513, H01L 2900

Patent

active

055167217

ABSTRACT:
A shallow trench isolation structure is formed by a process having a reduced number of steps and thermal budget by filling trenches by liquid phase deposition of an insulating semiconductor oxide and heat treating the deposit to form a layer of high quality thermal oxide at an interface between the deposited oxide and the body of semiconductor material (e.g. substrate) into which the trench extends. This process yields an isolation structure with reduced stress and reduced tendency to develop charge leakage. The structure can be readily and easily planarized, particularly if a polish-stop layer is applied over the body of semiconductor material and voids and contamination of the deposited oxide are substantially eliminated by self-aligned deposition above the trench in the volume of apertures on a resist used to form the trench.

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