Isolation structure in field device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S510000, C257S519000, C257SE29020

Reexamination Certificate

active

07911022

ABSTRACT:
A semiconductor device. The semiconductor device comprises an isolation structure and two heavily doped regions of a second conductivity type spaced apart from each other by the isolation structure. The isolation structure comprises an isolation region in a semiconductor substrate and a heavily doped region of the first conductivity type. The isolation region has an opening and the heavily doped region of the first conductivity type is substantially surrounded by the opening of the isolation region.

REFERENCES:
patent: 3845495 (1974-10-01), Cauge et al.
patent: 4038110 (1977-07-01), Feng
patent: 4446476 (1984-05-01), Isaac et al.
patent: 5043778 (1991-08-01), Teng et al.
patent: 5262672 (1993-11-01), Iranmanesh
patent: 5397715 (1995-03-01), Miller
patent: 5872378 (1999-02-01), Rose et al.
patent: 6507080 (2003-01-01), Jang et al.
patent: 2004/0067619 (2004-04-01), Niimi et al.
patent: 2005/0045946 (2005-03-01), Kobayashi
patent: 2005/0073006 (2005-04-01), Pequignot et al.
Dictionary.com definition of “GATE”, see p. 2.

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