Isolation structure for trench capacitors and fabrication...

Details Isolation structure for trench capacitors and fabrication... Isolation structure for trench capacitors and fabrication...

2006-05-09

2006-05-09

Leko, Steven (Department: 2811)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S736000, C438S734000, C438S700000, C438S702000, C438S737000, C438S738000, C438S743000, C438S744000, C257S301000, C257S304000, C257S306000

Reexamination Certificate

active

07041567

ABSTRACT:
This invention relates to a method for self-aligned fabricating an isolation structure of a trench capacitor. The method takes two steps to etch the substrate for forming the shallow trench of the isolation structure, wherein the conductive layer and the collar oxide layer of the trench capacitor remain intact during the etching processes.

REFERENCES:
patent: 5770465 (1998-06-01), MacDonald et al.
patent: 5989978 (1999-11-01), Peidous
patent: 6046487 (2000-04-01), Benedict et al.
patent: 6146974 (2000-11-01), Liu et al.
patent: 6514816 (2003-02-01), Lee

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