Isolation regions

Details Isolation regions Isolation regions

2011-06-28

2011-06-28

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S436000, C438S437000, C438S773000, C257SE21546, C257SE21628

Reexamination Certificate

active

07968425

ABSTRACT:
Methods and apparatus are provided. An isolation region is formed by lining a trench formed in a substrate with a first dielectric layer by forming the first dielectric layer adjoining exposed substrate surfaces within the trench using a high-density plasma process, forming a layer of spin-on dielectric material on the first dielectric layer so as to fill a remaining portion of the trench, and densifying the layer of spin-on dielectric material.

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