Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Patent
1993-10-08
1995-03-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
257289, 257499, 257617, H01L 2702, H01L 2712
Patent
active
053999002
ABSTRACT:
A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900.degree. C. The isolation region is formed of ions of a group III or V element which are implanted into the body and then thermally annealed at a temperature of between 650.degree. C. and 900.degree. C. This provides the regions with voids which remove free carriers and makes the region highly resistive.
REFERENCES:
patent: 4837178 (1989-06-01), Ohshima et al.
patent: 5043777 (1991-08-01), Srirnm
Ko et al, "Correlation of Void Formation With the Reduction of Carrier Activation and Anomalous Dopant Diffusion in Si-Implanted GaAs", Procedures of Material Research Symposium, vol. 163, pp. 983-986 (1990).
Lee et al, "Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices", Applied Physics Letters, vol. 57(4), pp. 389-391, Jul. 23, 1990.
Chen Samuel
Ko Kei-Yu
Lee Shuit-Tong
Eastman Kodak Company
Ngo Ngan V.
Owens Raymond L.
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