Isolation process for semiconductor devices

Details Isolation process for semiconductor devices Isolation process for semiconductor devices

1987-05-26

1988-05-31

Roy, Upendra

Fishing, trapping, and vermin destroying

437 11, 437 24, 437 69, 437 70, H01L 21265, H01L 1700

Patent

active

047481340

ABSTRACT:
An improved process is disclosed for forming the field oxide which provides isolation between adjacent devices in an integrated circuit. In one embodiment of the invention the improvement includes implanting halogen ions, and preferably chlorine ions, into the selected regions of a semiconductor substrate where field oxide is to be formed. The halogen ions are implanted before the field oxide is thermally grown and result in a localized enhancement of the oxide growth rate in the vertical direction compared to the lateral direction. For a given oxidation cycle, the halogen implant results in the growth of a thicker oxide with minimum lateral encroachment.

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patent: 4551910 (1985-11-01), Patterson
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"Kinetics of the Thermal Oxidation of Silicon in O.sub.2 /HCl Mixtures", J. Electrochem Soc., vol. 124, No. 5, May 1977, pp. 735-739.
"Selective Oxidation Technologies for High Density MOS", IEEE Electron Device Letters, EDL-2, No. 10, Oct. 1981, pp. 244-247.
"Electrical Properties of MOS Devices Made with SILO Technology", IEDM 8.sub.2, pp. 220-222.

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