Isolation process and structure for CMOS imagers

Details Isolation process and structure for CMOS imagers Isolation process and structure for CMOS imagers

2005-05-24

2008-10-07

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S510000, C438S514000, C438S527000, C438S529000

Reexamination Certificate

active

07432121

ABSTRACT:
A barrier implanted region of a first conductivity type formed in lieu of an isolation region of a pixel sensor cell that provides physical and electrical isolation of photosensitive elements of adjacent pixel sensor cells of a CMOS imager. The barrier implanted region comprises a first region having a first width and a second region having a second width greater than the first width, the second region being located below the first region. The first region is laterally spaced from doped regions of a second conductivity type of adjacent photodiodes of pixel sensor cells of a CMOS imager.

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