Isolation methods in semiconductor devices

Details Isolation methods in semiconductor devices Isolation methods in semiconductor devices

2007-05-15

2007-05-15

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21001

Reexamination Certificate

active

11021032

ABSTRACT:
Methods of forming a device isolation layer in a semiconductor substrate are disclosed. A disclosed method includes: forming a trench in a field area of a semiconductor substrate, growing a SiON layer on an inside of the trench by annealing in an ambience of NO gas, and filling the trench with a trench-fill material.

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