Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-05-15
2007-05-15
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21001
Reexamination Certificate
active
11021032
ABSTRACT:
Methods of forming a device isolation layer in a semiconductor substrate are disclosed. A disclosed method includes: forming a trench in a field area of a semiconductor substrate, growing a SiON layer on an inside of the trench by annealing in an ambience of NO gas, and filling the trench with a trench-fill material.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Geyer Scott B.
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