Isolation layer for semiconductor devices and method for...

Details Isolation layer for semiconductor devices and method for... Isolation layer for semiconductor devices and method for...

2008-07-22

2008-07-22

Rose, Kiesha L (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S059000

Reexamination Certificate

active

07402880

ABSTRACT:
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of the semiconductor device, a first layer of metal disposed upon an upper surface of the first layer of dielectric material, and a thick film anti-reflective layer having a thickness of at least about one micron disposed upon an upper surface of the first layer of metal.

REFERENCES:
patent: 6282010 (2001-08-01), Sulzbach et al.
patent: 6804039 (2004-10-01), Doan et al.
patent: 2006/0087717 (2006-04-01), McGinley et al.

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