Isolation junctions for semiconductors devices

Details Isolation junctions for semiconductors devices Isolation junctions for semiconductors devices

1975-03-10

1976-10-26

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 60, 357 88, 357 89, 357 90, 148 15, H01L 2704, H01L 2904, H01L 700

Patent

active

039887634

ABSTRACT:
Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions is recrystallized semiconductor material with solid solubility of the dopant impurity.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3617399 (1971-11-01), Fowler
patent: 3624467 (1971-11-01), Bean et al.
patent: 3656028 (1972-04-01), Langdon
patent: 3769105 (1973-10-01), Chen et al.

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