Isolation junctions for semiconductor devices

Details Isolation junctions for semiconductor devices Isolation junctions for semiconductor devices

1974-11-01

1976-11-30

Wojciechowicz, Edward J.

357 47, 357 60, 357 88, 357 89, 357 90, H01L 2702, H01L 2704, H01L 2904

Patent

active

039953092

ABSTRACT:
Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions is recrystallized semiconductor material with solid solubility of the dopant impurity.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3617399 (1971-11-01), Fowler
patent: 3624467 (1971-11-01), Bean
patent: 3656028 (1972-04-01), Langdon
patent: 3769105 (1973-10-01), Chen

Affiliated with

Also associated with

Rating

Isolation junctions for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolation junctions for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation junctions for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1058384