Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1998-09-28
2000-12-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257538, 257547, H01L 2900
Patent
active
061570737
ABSTRACT:
The present invention relates to a composite integrated circuit including at least one well that separates analog and digital blocks of the circuit, this well being connected to a first terminal of a power supply of biasing of one of the two blocks, and being of type opposite to that of the circuit substrate, and a resistor being interposed on the well biasing link.
REFERENCES:
patent: 5336915 (1994-08-01), Fujita et al.
patent: 5459349 (1995-10-01), Kobatake
patent: 5491358 (1996-02-01), Miyata
patent: 5828108 (1998-10-01), Toyoda
patent: 5880515 (1999-03-01), Bartlett
patent: 6057588 (2000-05-01), Yamazaki
Patent Abstracts of Japan, vol. 97, No. 7, Jul. 31, 1997 & JP-A-09 064276 (Fujitsu Ltd.).
Ananymous: "Nwell Structure For Substrate Noise Isolation" IBM Technical Disclosure Bulletin, vol. 31, No. 7, Dec. 1988, New York, US, pp. 351-352.
Galanthay Theodore E.
Morris James H.
Ngo Ngan V.
STMicroelectronics S.A.
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