Isolation between diffusion lines in a memory array

Details Isolation between diffusion lines in a memory array Isolation between diffusion lines in a memory array

1994-09-30

1995-11-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, 437 61, H01L 218247

Patent

active

054666244

ABSTRACT:
A method of forming a memory device with improved isolation between diffusion lines. Parallel, spaced apart thick oxide strips are grown on a substrate. Next, spaced apart, parallel strips having a polysilicon and nitride layer, oriented perpendicular to the first strips, are formed. The oxide between the second strips is removed, followed by an implantation to form source and drain regions. The nitride layer on the second strips is removed on those strips between two drain diffusions and an oxidation is performed to form self-aligned thick oxide over the source and drain regions. The strips from which the nitride has been removed are also oxidized, thus providing isolation between adjacent drain lines. In the formation of floating gate memory devices, a second polysilicon layer is deposited, and patterned in one direction to form strips overlying the second strips. After deposition of an intergate dielectric and a third polysilicon layer, a further patterning step is performed to form strips perpendicular to the second strips and second polysilicon layer and an etch is performed to etch the third polysilicon layer, intergate dielectric, second polysilicon layer and first polysilicon layer not covered by the patterning layer.

REFERENCES:
patent: 4151021 (1979-04-01), McElroy
patent: 4506437 (1985-03-01), Godejahn, Jr.
patent: 5028979 (1991-07-01), Mazzali
patent: 5075245 (1991-12-01), Woo et al.
patent: 5102814 (1992-04-01), Woo
patent: 5120671 (1992-06-01), Tang et al.
patent: 5330938 (1994-07-01), Camerlenghi

Affiliated with

Also associated with

Rating

Isolation between diffusion lines in a memory array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolation between diffusion lines in a memory array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation between diffusion lines in a memory array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1220605