Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-02-27
2010-06-22
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE23002
Reexamination Certificate
active
07741661
ABSTRACT:
Various integrated circuit devices, including a lateral DMOS transistor, a quasi-vertical DMOS transistor, a junction field-effect transistor (JFET), a depletion-mode MOSFET, and a diode, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.
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Disney Donald R.
Williams Richard K.
Advanced Analogic Technologies, Inc.
Blum David S
Patentability Associates
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