Isolation and substrate connection for a bipolar integrated circ

Details Isolation and substrate connection for a bipolar integrated circ Isolation and substrate connection for a bipolar integrated circ

1985-09-25

1988-01-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 63, 357 34, 357 50, H01L 2122, H01L 2120, H01L 2126

Patent

active

047216824

ABSTRACT:
A structure for isolating a bipolar transistor (100) from an adjacent transistor includes a first silicon dioxide isolation region (110) laterally surrounding the transistor and a conductive channel stop region (112) laterally surrounding the silicon dioxide isolation region. The channel stop region allows electrical potential of the substrate (102) to be controlled and the silicon dioxide isolation region prevents the channel stop from contacting the transistor.

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J. Electrochem. Soc.:Solid-State Science and Technology, vol. 123, No. 11, pp. 1729-1737, "Topology of Silicon Structure with Recessed SiO.sub.2 " by E. Bassous et al.

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