Isolating protective film for semiconductor devices and method f

Chemistry of carbon compounds – Miscellaneous organic carbon compounds – C-metal

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260 47CP, 260 78TF, 427 82, 357 72, H01L 2330

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040018709

ABSTRACT:
An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin.
The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.

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