Isolating phase change memory devices

Details Isolating phase change memory devices Isolating phase change memory devices

2007-09-18

2007-09-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S073000, C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

10319183

ABSTRACT:
A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.

REFERENCES:
patent: 3961351 (1976-06-01), Blatt
patent: 4174521 (1979-11-01), Neale
patent: 4531144 (1985-07-01), Holmberg
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 5166901 (1992-11-01), Shaw et al.
patent: 5225359 (1993-07-01), DeLong
patent: 5920788 (1999-07-01), Reinberg
patent: 6487106 (2002-11-01), Kozicki
patent: 6815308 (2004-11-01), Holscher et al.
patent: 2002/0160574 (2002-10-01), Zahurak et al.
patent: 2002/0195660 (2002-12-01), Lee
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,”presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In and Moon, J.T., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Oh, J.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Chung, U.I., Jeong, H.S. and Kim, Kinam, “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 mm-CMOS Technologies,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park, S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, U-In and Moon, J.T., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Karpov et al., “Isolating Phase Change Memory Devices”, U.S. Appl. No. 10/318,704, filed Dec. 13, 2002.

Affiliated with

Also associated with

Rating

Isolating phase change memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolating phase change memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolating phase change memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3758785