Isolating phase change memories with schottky diodes and...

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S310000, C257S311000, C365S105000

Reexamination Certificate

active

06995446

ABSTRACT:
A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a guard ring may be utilized.

REFERENCES:
patent: 3718916 (1973-02-01), Wada et al.
patent: 3858231 (1974-12-01), Magdo et al.
patent: 3924320 (1975-12-01), Altman et al
patent: 4503521 (1985-03-01), Schick et al.
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 5166901 (1992-11-01), Shaw et al.
patent: 6066884 (2000-05-01), Krutsick
patent: 2003/0128134 (2003-07-01), Fierro et al.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In and Moon, J.T., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Oh, J.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Chung, U.I., Jeong, H.S. and Kim, Kinam, “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 mm-CMOS Technologies,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park, S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, U-In and Moon, J.T., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Karpov et al., U.S. Appl. No. 10/319,183, filed Dec. 13, 2002, entitled “Isolating Phase Change Memory Devices”.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Isolating phase change memories with schottky diodes and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolating phase change memories with schottky diodes and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolating phase change memories with schottky diodes and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3703664

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.