Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2006-02-07
2006-02-07
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S310000, C257S311000, C365S105000
Reexamination Certificate
active
06995446
ABSTRACT:
A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a guard ring may be utilized.
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Karpov et al., U.S. Appl. No. 10/319,183, filed Dec. 13, 2002, entitled “Isolating Phase Change Memory Devices”.
Gill Manzur
Karpov Ilya
Dickey Thomas L.
Ovonyx Inc.
Tran Minhloan
Trop Pruner & Hu P.C.
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