Isolated vertical power device structure with both N-doped...

Details Isolated vertical power device structure with both N-doped... Isolated vertical power device structure with both N-doped...

2005-11-21

2008-10-28

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S133000, C438S139000, C257SE21388

Reexamination Certificate

active

07442584

ABSTRACT:
A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around the conduction region. Thereafter, a film containing a second type dopant is deposited in the front and back isolation wall trenches. In the conduction region on the back surface, conduction region trenches are formed inside the perimeter of the isolation wall trenches. A first type dopant is deposited in the conduction region trenches. The dopants are diffused from the conduction region trenches and isolation wall trenches to form a first conductivity type conduction region structure and a second conductivity type isolation wall.

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patent: 2003/0085431 (2003-05-01), Shenoy

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