Isolated trench semiconductor device

Details Isolated trench semiconductor device Isolated trench semiconductor device

1993-08-27

2000-02-22

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

257301, 257305, 257316, H01L 2906

Patent

active

060283467

ABSTRACT:
MOS transistors connected to each other are electrically isolated at both ends of a transfer gate by an LOCOS oxide film, and the bottom surface in a trenched capacitor portion and the side wall of a trench between adjacent capacitors are electrically isolated. A leakage current can be reduced; so that a semiconductor device comprising a capacitor having a reduced occupied area and large capacitance can e obtained.

REFERENCES:
patent: 4606011 (1986-08-01), Wada et al.
patent: 4672410 (1987-06-01), Miura et al.
patent: 4713677 (1987-12-01), Tigelaar et al.
patent: 4814840 (1989-03-01), Kameda
patent: 5021842 (1991-06-01), Koyanagi

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