Isolated sidewall capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

361313, 361320, 3613215, 3613214, 29 2542, H01G 406, H01G 4008, H01G 4002

Patent

active

059148519

ABSTRACT:
A capacitor structure is provided, with a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening.

REFERENCES:
patent: 4591738 (1986-05-01), Bialas, Jr. et al.
patent: 4954927 (1990-09-01), Park
patent: 5081559 (1992-01-01), Fazan et al.
patent: 5189503 (1993-02-01), Suguro et al.
patent: 5192704 (1993-03-01), McDavid et al.
patent: 5196909 (1993-03-01), Chan et al.
patent: 5208725 (1993-05-01), Akcasu
patent: 5313089 (1994-05-01), Jones, Jr.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5365096 (1994-11-01), Taniguchi
patent: 5366920 (1994-11-01), Yamamichi et al.
patent: 5371700 (1994-12-01), Hamada
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5383088 (1995-01-01), Chapple-Sokol et al.
patent: 5384729 (1995-01-01), Sameshima
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5397748 (1995-03-01), Watanabe et al.
patent: 5405796 (1995-04-01), Jones, Jr.
patent: 5416042 (1995-05-01), Beach et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5438011 (1995-08-01), Blalock et al.
patent: 5438012 (1995-08-01), Kamiyama
patent: 5442213 (1995-08-01), Okudaira et al.
patent: 5498889 (1996-03-01), Hayden
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5583360 (1996-12-01), Roth et al.
patent: 5585998 (1996-12-01), Kotecki et al.
patent: 5633781 (1997-05-01), Saenger et al.
D. E. Kotecki and K. L. Saenger, "Fabrication Process for Container and Crown Electrodes in Memory Devices", IBM Technical Disclosure Bulletin, vol. 38, No. 11, Nov. 1995, pp. 197-199.
P. Fazan et al., Patent Application filed Sep. 21, 1995 (Micron Semiconductor), Micron Docket No. 94-0355, "A Scalable Barrierless High Epsilon Capacitor Structure with Sub-Lithography Capacitor Spacing".
B. Gnade et al., Patent Application S/N 08/283,881 filed Aug. 01, 1994 (Texas Instruments & Advanced Technology Materials), "Improved MIM High Permittivity Capacitor Structure, and Process to Form Such a Structure".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Isolated sidewall capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolated sidewall capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolated sidewall capacitor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1712149

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.