Isolated resurf LDMOS devices for multiple outputs on one die

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257343, 257409, 257492, 257547, H01L 2900, H01L 2976, H01L 2994, H01L 2358

Patent

active

052869954

ABSTRACT:
A power transistor having an epitaxial layer within an isolation region is formed in a semiconductor substrate. A buried diffusion within the substrate with vertical diffusions contacting it form the isolation region. A drain, source, gate, and drift region are formed within the epitaxial layer such that a RESURF LDMOS transistor is formed having its source isolated from the substrate. Multiple power transistors may share the buried isolation region. A P type semiconductor substrate allows the power transistor and high performance CMOS circuitry to be formed on the same semiconductor die.

REFERENCES:
patent: 4593458 (1986-06-01), Adler
patent: 4890146 (1989-12-01), Williams et al.
patent: 4969030 (1990-11-01), Musumeci et al.
patent: 4994904 (1991-02-01), Nakagawa et al.
patent: 5072267 (1991-12-01), Hattori
patent: 5087954 (1992-02-01), Shirai
patent: 5156989 (1992-10-01), Williams et al.
IEDM Technical Digest, Dec. 3-5, 1979, "High voltage thin layer devices (RESURE DEVICES)", by Appels et al., pp. 238-241.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Isolated resurf LDMOS devices for multiple outputs on one die does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolated resurf LDMOS devices for multiple outputs on one die, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolated resurf LDMOS devices for multiple outputs on one die will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1209495

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.