Isolated resurf LDMOS devices for multiple outputs on one die

Details Isolated resurf LDMOS devices for multiple outputs on one die Isolated resurf LDMOS devices for multiple outputs on one die

1992-07-14

1994-02-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257343, 257409, 257492, 257547, H01L 2900, H01L 2976, H01L 2994, H01L 2358

Patent

active

052869954

ABSTRACT:
A power transistor having an epitaxial layer within an isolation region is formed in a semiconductor substrate. A buried diffusion within the substrate with vertical diffusions contacting it form the isolation region. A drain, source, gate, and drift region are formed within the epitaxial layer such that a RESURF LDMOS transistor is formed having its source isolated from the substrate. Multiple power transistors may share the buried isolation region. A P type semiconductor substrate allows the power transistor and high performance CMOS circuitry to be formed on the same semiconductor die.

REFERENCES:
patent: 4593458 (1986-06-01), Adler
patent: 4890146 (1989-12-01), Williams et al.
patent: 4969030 (1990-11-01), Musumeci et al.
patent: 4994904 (1991-02-01), Nakagawa et al.
patent: 5072267 (1991-12-01), Hattori
patent: 5087954 (1992-02-01), Shirai
patent: 5156989 (1992-10-01), Williams et al.
IEDM Technical Digest, Dec. 3-5, 1979, "High voltage thin layer devices (RESURE DEVICES)", by Appels et al., pp. 238-241.

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