Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-12-17
2011-10-04
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S501000, C257S504000, C257S506000, C257S508000, C257S509000, C257S499000, C257S511000, C257S513000, C257S555000, C257S558000, C257SE21540, C257SE21544, C257SE21545, C257SE21558, C257SE21564, C257SE21628, C257SE27019, C257SE27023, C257SE29020, C257SE29175
Reexamination Certificate
active
08030731
ABSTRACT:
An isolated diode comprises a floor isolation region, a dielectric-filled trench and a sidewall region extending from a bottom of the trench at least to the floor isolation region. The floor isolation region, dielectric-filled trench and a sidewall region are comprised in one terminal (anode or cathode) of the diode and together form an isolated pocket in which the other terminal of the diode is formed. In one embodiment the terminals of the diode are separated by a second dielectric-filled trench and sidewall region.
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Chan Wai Tien
Disney Donald Ray
Williams Richard K.
Advanced Analogic Technologies (Hong Kong) Limited
Advanced Analogic Technologies, Inc.
Lopez Fei Fei Yeung
Patentability Associates
Tran Minh-Loan T
LandOfFree
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