Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-05-16
2006-05-16
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S294000, C438S297000, C438S411000, C438S422000, C438S723000, C438S724000, C438S756000, C438S757000
Reexamination Certificate
active
07045468
ABSTRACT:
A MOSFET structure in which the channel region is contiguous with the semiconductor substrate while the source and drain junctions are substantially isolated from the substrate, includes a dielectric volume formed adjacent and subjacent to portions of the source and drain regions.In a further aspect of the invention, a process for forming an isolated junction in a bulk semiconductor includes forming a dielectric volume adjacent and subjacent to portions of the source and drain regions.
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Chen Eric B.
Engineer Rahul D.
Norton Nadine G.
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