Isolated HF-control SCR switch

Details Isolated HF-control SCR switch Isolated HF-control SCR switch

2007-08-21

2007-08-21

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S115000, C257S157000, C327S428000, C327S438000, C327S439000, C327S445000, C327S453000, C327S455000, C327S475000, C327S476000, C327S460000

Reexamination Certificate

active

10963383

ABSTRACT:
A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, having on its front surface side a main P-type semiconductor area formed in an N-type gate semiconductor area, a first portion of the main area being connected to one of the main areas, a second portion of the main area is connected to one of the control terminals via a first integrated capacitor, and a portion of the gate area being connected to the other of the control terminals via a second integrated capacitor.

REFERENCES:
patent: 4389691 (1983-06-01), Hancock
patent: 4649414 (1987-03-01), Ueda et al.
patent: 4760432 (1988-07-01), Stoisiek et al.
patent: 4982259 (1991-01-01), Yakushiji et al.
patent: 5959440 (1999-09-01), Tobita et al.
patent: 6326648 (2001-12-01), Jalade et al.
French Search Report from corresponding French National Application No. 03/50702, filed Oct. 17, 2003.

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