Isolated Germanium nanowire on Silicon fin

Details Isolated Germanium nanowire on Silicon fin Isolated Germanium nanowire on Silicon fin

2008-12-30

2010-12-14

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Point contact device

C438S197000, C438S149000, C438S151000, C438S176000, C438S198000, C438S211000, C438S257000, C438S588000, C438S283000, C438S142000, C438S195000, C438S213000, C438S229000, C257S066000, C257S072000, C257SE21179, C257S347000, C257S331000, C257S250000, C257SE27112, C257SE29264, C257SE29275

Reexamination Certificate

active

07851790

ABSTRACT:
The present invention describes a method of and an apparatus for providing a wafer, the wafer including Silicon; etching trenches in the wafer to form Silicon fins; filling Silicon Oxide in the trenches; planarizing the Silicon Oxide; recessing the Silicon Oxide to a first thickness to form exposed Silicon pedestals from the Silicon fins; depositing SiGe over the exposed Silicon pedestal; recessing the Silicon Oxide to a second thickness; undercutting the exposed Silicon pedestals to form necked-in Silicon pedestals; oxidizing thermally and annealing the SiGe; and forming Germanium nanowires.

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